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Beranda / Rjp63K2 Voltage - Silicon N Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Buy Igbt Transistor Silicon N Channel Mosfet Igbt Transistor Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Product On Alibaba Com / Tr = 60 ns typ, tf = 200 ns typ.

Rjp63K2 Voltage - Silicon N Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Buy Igbt Transistor Silicon N Channel Mosfet Igbt Transistor Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Product On Alibaba Com / Tr = 60 ns typ, tf = 200 ns typ.

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Ices = 1 a max. Vce(sat) = 1.9 v typ high speed switching: Rjp63k2 pdf datasheet search results. Low collector to emitter saturation voltage: More images for rjp63k2 voltage »

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Vce(sat) = 1.9 v typ high speed switching: Vce (sat) = 1.9 v typ high speed switching: Tr = 60 ns typ, tf = 200 ns typ. High input impedance allows voltage drives; Vce (sat) = 1.9 v typ. Tr = 60 ns typ, tf = 200 ns typ. Silicon n channel igbt high speed power switching. Tr= 60 ns typ, tf= 200 ns typ.

Vce(sat) = 1.9 v typ high speed switching:

Vce(sat) = 1.9 v typ high speed switching: Silicon n channel igbt high speed power switching, rjp63k2 datasheet, rjp63k2 circuit, rjp63k2 data sheet : Vce(sat) = 1.9 v typ high speed switching: Vce (sat)= 1.9 v typ. Rjp63k2 pdf datasheet search results. Silicon n channel igbt high speed power switching. Tr= 60 ns typ, tf= 200 ns typ. Ices = 1 a max. Tr = 60 ns typ, tf = 200 ns typ. Renesas, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. High input impedance allows voltage drives; Low collector to emitter saturation voltage: Vce (sat) = 1.9 v typ.

Tr = 60 ns typ, tf = 200 ns typ. Tr = 60 ns typ, tf = 200 ns typ. Vce (sat) = 1.9 v typ. Tr= 60 ns typ, tf= 200 ns typ. 40a• equivalent to rjp63k2• equivalent to rjp30e2• type designator:

Renesas, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Buy 10pcs Rjp63k2 Mosfet To 263 Liquid Crystal Field Effect Transistor At Affordable Prices Free Shipping Real Reviews With Photos Joom
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Silicon n channel igbt high speed power switching. Ices = 1 a max. Silicon n channel igbt high speed power switching. High input impedance allows voltage drives; Vce(sat) = 1.9 v typ high speed switching: More images for rjp63k2 voltage » Zero gate voltage collector current ices — — 1 a vce = 630 v, vge = 0 gate to emitter leak current iges — — ±100 na vge = ± 30 v, vce = 0 gate to emitter cutoff voltage vge(off) 2.5 — 5 v vce = 10 v, ic = 1 ma collector to emitter saturation voltage vce(sat) — 1.9 2.4 v ic = 35 a, vge = 15 v note3 Tr= 60 ns typ, tf= 200 ns typ.

Ices = 1 a max.

Tr = 60 ns typ, tf = 200 ns typ. Ices = 1 a max. Rjp63k2 pdf datasheet search results. Vce (sat) = 1.9 v typ high speed switching: Silicon n channel igbt high speed power switching. Renesas, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Silicon n channel igbt high speed power switching. Vce(sat) = 1.9 v typ 40a• equivalent to rjp63k2• equivalent to rjp30e2• type designator: More images for rjp63k2 voltage » Low collector to emitter saturation voltage: Tr= 60 ns typ, tf= 200 ns typ. Tr = 60 ns typ, tf = 200 ns typ.

Tr = 60 ns typ, tf = 200 ns typ. Vce (sat)= 1.9 v typ. Tr = 60 ns typ, tf = 200 ns typ. Vce (sat) = 1.9 v typ. Vce(sat) = 1.9 v typ high speed switching:

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Vce(sat) = 1.9 v typ high speed switching: More images for rjp63k2 voltage » Tr = 60 ns typ, tf = 200 ns typ. Tr = 60 ns typ, tf = 200 ns typ. Silicon n channel igbt high speed power switching. Tr= 60 ns typ, tf= 200 ns typ. Ices = 1 a max. Tr = 60 ns typ, tf = 200 ns typ.

Ices = 1 a max.

More images for rjp63k2 voltage » High input impedance allows voltage drives; Vce (sat)= 1.9 v typ. Tr = 60 ns typ, tf = 200 ns typ. Vce(sat) = 1.9 v typ Vce (sat) = 1.9 v typ. Silicon n channel igbt high speed power switching. Tr = 60 ns typ, tf = 200 ns typ. Canadian $2.78 (us $2.28 approx.) rjp63f3 igbt transistor • n channel igbt high speed switching• vces : Low collector to emitter saturation voltage: Ices = 1 a max. Tr = 60 ns typ, tf = 200 ns typ. Ices = 1 a max.

Rjp63K2 Voltage - Silicon N Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Buy Igbt Transistor Silicon N Channel Mosfet Igbt Transistor Channel Mosfet 630v 35a Rjp63k2 Igbt Transistor Product On Alibaba Com / Tr = 60 ns typ, tf = 200 ns typ.. Renesas, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Vce (sat) = 1.9 v typ. Vce (sat) = 1.9 v typ high speed switching: Zero gate voltage collector current ices — — 1 a vce = 630 v, vge = 0 gate to emitter leak current iges — — ±100 na vge = ± 30 v, vce = 0 gate to emitter cutoff voltage vge(off) 2.5 — 5 v vce = 10 v, ic = 1 ma collector to emitter saturation voltage vce(sat) — 1.9 2.4 v ic = 35 a, vge = 15 v note3 Tr = 60 ns typ, tf = 200 ns typ.

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